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Description
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per channel. -
Features
• Small Package Size
• Collector - Emitter Breakdown Voltage: Min. 35V
• Current Transfer Ratio: Min. 50%
• Electrical Isolation Voltage: 5000Vrms
• Recognized by UL 1577 file No. E107486
• Approved by VDE 0884 file No. 104861
• RoHS Compliance -
Applications
• Interface between two circuits of different potential
• Vending Machine, Cordless Phone
• Key Phone, Fax, Motor Control
• Programmable Logic Control -
Absolute Maximum Ratings (at 25°C, unless otherwise noted)
Input Forward Current: ±50mA
Input Peak Forward Current: ±1A
Input Power Dissipation: 70mW
Input Junction Temperature: 125°C
Output Collect-Emitter Breakdown Voltage: 35V
Output Emitter-Collector Breakdown Voltage: 6V
Output Collector Current: 50mA
Output Collect Power Dissipation: 150mW
Input to Output Isolation Voltage: 5000Vrms
Storage Temperature: -55~+125°C
Operating Temperature: -30~+100°C
Lead Soldering Temperature: 260°C
Total Power Dissipation: 200mW
